Characterizing of silicon-germanium areas on silicon
US6238941A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for characterizing a structure including single-crystal silicon-germanium areas on a single-crystal silicon substrate, including the steps of measuring the X-ray diffraction spectrum of the structure, simulating the diffraction spectrum of a single-crystal silicon substrate, simulating the diffraction spectrum of a single-crystal silicon substrate entirely coated with a single-crystal SiGe layer, adding the simulated spectrums while assigning them weights a and 1-a to obtain a sum spectrum, comparing the sum spectrum with the measured spectrum and adjusting the simulation parameters and weight a to reduce the distance between the sum spectrum and the measured spectrum, and after optimizing, adopting the simulation parameters as the measurement parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.