Multiple threshold voltage semiconductor device fabrication technology
US6238982A · kind A · utility
40Cited by
10References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Apr 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
An integrated circuit process technology for simultaneously forming multiple threshold voltage devices is disclosed. Devices having both high speed and low power consumption can be fabricated for use in integrated circuits having a need for both, such as microprocessors having cache memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.