High aspect ratio contact structure for use in integrated circuits
US6239025A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1997 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Oct 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides an integrated circuit containing at least a portion of a first, horizontal, conductive or semiconductive layer covered by a first electrically insulating layer. A first conductive member is vertically provided through the first electrically insulating layer in electrical contact with the first, horizontal layer. The first conductive member includes a lower, substantially cylindrical portion, and an upper portion comprising an enlarged head. An upper surface of the upper portion is substantially coplanar with an upper surface of the first electrically insulating layer. A second electrically insulating layer is deposited over the upper surface of the upper portion of the first conductive member and the upper surface of the first electrically insulating layer. A second conductive member is provided through the second electrically insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.