Semiconductor memory device and manufacturing method thereof
US6239457A · kind A · utility
11Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Apr 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.