Inventor · Kokubunji, JP

Keiichi Yoshizumi

49Patents
12h-index
71Co-inventors
84Inventor score

Filing activity: Jul 12, 1982 → Jun 10, 2010

Most-cited inventions

PatentTitleAreaCited byStatus
US5444012A Method for manufacturing semiconductor integrated circuit device having a fuse element Emerging Cross-Sectional Technologies 57 Expired
US5144150A Configuration measuring apparatus Emerging Cross-Sectional Technologies 24 Expired
US4507766A Optical device for optically recording and reproducing information signals on an information carrier Physics 23 Expired
US5917181A Profile measuring apparatus Physics 23 Expired
US6480286B1 Method and apparatus for measuring thickness variation of a thin sheet material, and probe reflector used in the apparatus Physics 22 Expired
US5616916A Configuration measuring method and apparatus for optically detecting a displacement of a probe due to an atomic force Emerging Cross-Sectional Technologies 19 Expired
US5508540A Semiconductor integrated circuit device and process of manufacturing the same Emerging Cross-Sectional Technologies 19 Expired
US4822139A Optical head apparatus for optical disc player Physics 16 Expired
US5610856A Semiconductor integrated circuit device Emerging Cross-Sectional Technologies 15 Expired
US5283630A Error correcting method for measuring object surface using three-dimension measuring apparatus Physics 12 Expired
US5780328A Process for producing semiconductor integrated circuit Electricity 12 Expired
US8006402B2 Shape measuring apparatus and shape measuring method Physics 12 Active
US6239457A Semiconductor memory device and manufacturing method thereof Electricity 11 Expired
US5880497A Semiconductor integrated circuit device having capacitance element and process of manufacturing the same Emerging Cross-Sectional Technologies 11 Expired
US4776699A Optical measuring device Physics 10 Expired
US5455677A Optical probe Physics 10 Expired
US4611916A Optical measuring apparatus Physics 10 Expired
US5328864A Method of doping gate electrodes discretely with either P-type or N-type impurities to form discrete semiconductor regions Emerging Cross-Sectional Technologies 9 Expired
US7391083B2 Semiconductor device and a method of manufacturing the same Electricity 9 Active
US7259054B2 Method of manufacturing a semiconductor device that includes a process for forming a high breakdown voltage field effect transistor Electricity 9 Expired
US5319194A Apparatus for measuring birefringence without employing rotating mechanism Physics 9 Expired
US6026583A Shape measuring apparatus and method Physics 8 Expired
US7065893B2 Measurement probe and using method for the same Physics 8 Expired
US6579754B2 Semiconductor memory device having ferroelectric film and manufacturing method thereof Electricity 7 Expired
US7029224B2 Method and apparatus for transferring a thin plate Emerging Cross-Sectional Technologies 6 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.