Semiconductor gate trench with covered open ends
US6239464A · kind A · utility
76Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Jan 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device, which can have a uniform film on open ends of trenches by using materials having a different oxidation rate, and a fabrication method thereof are provided. The semiconductor device having trenches configured to have open ends covered with an oxidation film made of a material having an oxidation rate faster than that of a semiconductor substrate and a fabrication method thereof are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.