Self-aligned transistor contact for epitaxial layers
US6239477A · kind A · utility
24Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 7, 1998 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Oct 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28525
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An emitter contact structure, and associated method, for a bipolar junction transistor. The emitter contact structure includes a collector region, an intrinsic base region within the collector region, an extrinsic base region within the collector region, a base link-up region within the collector region between the intrinsic base region and the extrinsic base region, a base link diffusion source layer above the base link-up region, a capping layer above the base link diffusion source layer, and a base electrode laterally engaging the extrinsic base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.