Compound semiconductor device having a reduced source resistance
US6242327A · kind A · utility
26Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | May 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0612
Abstract
A compound semiconductor device includes a low resistance source and drain region covered by a protective layer of a compound semiconductor device carrying thereon a source electrode or a drain electrode. Further, a low resistance source and drain region formed by a regrowth process of a compound semiconductor material is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.