Photovoltaic device and process for producing the same
US6242686A · kind A · utility
73Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1999 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Jun 11, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.