III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers
US6242764A · kind A · utility
57Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Jul 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a GaN-based compound semiconductor light-emitting element, comprising an AlN buffer layer, a GaN lattice strain moderating layer, and an n-type AlGaN contact layer formed on the layer. The GaN lattice strain moderating layer has a lattice constant larger than that of the AlN buffer layer. On the other hand, the contact layer has a lattice constant smaller than that of the AlN buffer layer. Further, the GaN lattice strain moderating layer has a thickness falling within a range of between 0.01 .mu.m to 0.5 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.