High electron mobility transistor
US6242766A · kind A · utility
14Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 18, 1999 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Nov 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8164
Abstract
A high electron mobility transistor including an n-type semiconductor layer having a mixed crystal of aluminum gallium arsenide with an aluminum mixed ratio set to fall in the range of 0.2.about.0.3, and an undoped semiconductor layer forming a superlattice structure of an electron supplying layer, the undoped semiconductor layer having a mixed crystal of aluminum gallium arsenide with an aluminum mixed ratio set to fall in the proximity of a critical mixed crystal ratio between direct transition and indirect transition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.