SOI Semiconductor device with field shield electrode
US6242786A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Dec 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field shield portion consisting of a kind of transistor is formed to electrically insulate an NMOS region of a memory cell from other regions. The field shield portion includes a field shield gate electrode layer, a p type region and a gate insulating film. Threshold value of this transistor is set higher than the power supply voltage, and field gate electrode layer thereof is in a floating state. It is unnecessary to provide a contact portion for applying a prescribed voltage at field shield gate electrode layer. Therefore, the region for forming the contact portion in field shield gate electrode layer can be reduced. As a result, a semiconductor device of which layout area is reduced, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.