Doping control in selective area growth (SAG) of InP epitaxy in the fabrication of solid state semiconductor lasers
US6245144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Dec 6, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of controlling the relative amounts of silicon dopant inside and outside of an enhanced growth region on an indium phosphide substrate using a metalorganic chemical vapor deposition (MOCVD) process. The method includes the steps of positioning the indium phosphide substrate in a reactor chamber, and defining an enhanced growth region on the substrate by depositing a dielectric mask on the substrate. The indium phosphide substrate is heated to a growth temperature of between about 600 and 630.degree. C., and the pressure in the reactor chamber is adjusted to between about 40 and 80 Torr. A first gas contains a metalorganic compound comprising indium and a hydrogen carrier gas flow of between about 12 and 16 liters/minute, and a second gas containing a phosphide and a doping gas containing a silicon dopant at a flow rate of between are introduced into the reactor chamber. The first and second gases are mixed in the chamber and forced over the substrate in a laminar flow such that the mixed convection parameter is between about 0.31 and 0.33. An n-type indium phosphide epitaxial layer is thereby grown over the substrate by reacting the first with the second gas and thermally …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.