Michael Geva
11Patents
5h-index
29Co-inventors
66Inventor score
Filing activity: Jan 31, 1986 → Dec 22, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5232873A | Method of fabricating contacts for semiconductor devices | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6437372B1 | Diffusion barrier spikes for III-V structures | Electricity | 21 | Expired |
| US6664605B1 | Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs | Electricity | 16 | Expired |
| US6706542B1 | Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication | Electricity | 11 | Expired |
| US4755671A | Method and apparatus for separating ions of differing charge-to-mass ratio | Performing Operations; Transporting | 7 | Expired |
| US6819695B1 | Dopant diffusion barrier layer for use in III-V structures | Electricity | 4 | Expired |
| US6245144A | Doping control in selective area growth (SAG) of InP epitaxy in the fabrication of solid state semiconductor lasers | Chemistry; Metallurgy | 3 | Expired |
| US6520348B1 | Multiple inclined wafer holder for improved vapor transport and reflux for sealed ampoule diffusion process | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6133125A | Selective area diffusion control process | Electricity | 1 | Expired |
| US9252118B2 | CMOS-compatible gold-free contacts | Electricity | 1 | Active |
| US6542686B1 | Optoelectronic device including a barrier layer and interface barrier layer and a method of manufacture thereof | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.