Photoresist system and process for aerial image enhancement

US6245492A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Wu-Song Huang · Brewster, US
• Ahmad D. Katnani · Poughkeepsie, US
• Ranee W. Kwong · Wappingers Falls, US
• Kathleen H. Martinek · Newburgh, US

Key dates

• Filing date: Aug 13, 1998
• Grant date: Jun 12, 2001
• Expiry date: Aug 13, 2018

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/2022
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Improved resolution of lithographic patterns can be obtained using a double exposure process where a resist layer is subjected to a patternwise first exposure followed by a blanket second exposure. The resist composition preferably contains a chemically amplified resist which undergoes significant shrinkage on exposure to radiation, a chemically amplified resist which contains a photo-bleachable component, or a chemically amplified resist which contains a chemical-bleachable component.