Ahmad D. Katnani
32Patents
17h-index
66Co-inventors
84Inventor score
Filing activity: Nov 22, 1991 → May 30, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6087064A | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method | Emerging Cross-Sectional Technologies | 139 | Expired |
| US6210856A | Resist composition and process of forming a patterned resist layer on a substrate | Physics | 59 | Expired |
| US6114082A | Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same | Physics | 49 | Expired |
| US6340734B1 | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method | Emerging Cross-Sectional Technologies | 37 | Expired |
| US5296332A | Crosslinkable aqueous developable photoresist compositions and method for use thereof | Physics | 35 | Expired |
| US5609989A | Acid scavengers for use in chemically amplified photoresists | Physics | 32 | Expired |
| US5955222A | Method of making a rim-type phase-shift mask and mask manufactured thereby | Physics | 29 | Expired |
| US6037097A | E-beam application to mask making using new improved KRS resist system | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6200726A | Optimization of space width for hybrid photoresist | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6365321B1 | Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6187505A | Radiation sensitive silicon-containing resists | Physics | 25 | Expired |
| US6043003A | E-beam application to mask making using new improved KRS resist system | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6344305B1 | Radiation sensitive silicon-containing resists | Physics | 21 | Expired |
| US6245492A | Photoresist system and process for aerial image enhancement | Physics | 21 | Expired |
| US5919597A | Methods for preparing photoresist compositions | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6284439A | "Method of producing an integrated circuit chip using low ""k"" factor hybrid photoresist and apparatus formed thereby" | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6313492A | Integrated circuit chip produced by using frequency doubling hybrid photoresist | Physics | 18 | Expired |
| US6300035A | Chemically amplified positive photoresists | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6103447A | Approach to formulating irradiation sensitive positive resists | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6440635B1 | Low “K” factor hybrid photoresist | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6190829A | "Low ""K"" factor hybrid photoresist" | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6303263A | Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6372412B1 | Method of producing an integrated circuit chip using frequency doubling hybrid photoresist and apparatus formed thereby | Physics | 10 | Expired |
| US5733705A | Acid Scavengers for use in chemically amplified photoresists | Physics | 10 | Expired |
| US5667938A | Acid scavengers for use in chemically amplified photoresists | Physics | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.