Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing
US6245605A · kind A · utility
32Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Aug 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/671
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for protecting metal (112) from oxidation during various oxidation steps such as CVD SiO2 oxidation for forming an overlying oxide layer (114), smile oxidation, and sidewall (116) deposition. The gas CO2 is added to the oxidation chemistry. The CO2/H2 ratio is controlled for selective oxidation. The metal (112) is effectively protected from oxidation due to the existence of both H2 and CO2 as strong reduction reagents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.