Chih-Chen Cho
91Patents
23h-index
51Co-inventors
87Inventor score
Filing activity: Aug 14, 1990 → Aug 14, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6140252A | Porous dielectric material with improved pore surface properties for electronics applications | Electricity | 600 | Expired |
| US5470802A | Method of making a semiconductor device using a low dielectric constant material | Electricity | 135 | Expired |
| US5407860A | Method of forming air gap dielectric spaces between semiconductor leads | Electricity | 117 | Expired |
| US5488015A | Method of making an interconnect structure with an integrated low density dielectric | Emerging Cross-Sectional Technologies | 112 | Expired |
| US5661344A | Porous dielectric material with a passivation layer for electronics applications | Electricity | 83 | Expired |
| US5913145A | Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures | Emerging Cross-Sectional Technologies | 80 | Expired |
| US5561318A | Porous composites as a low dielectric constant material for electronics applications | Electricity | 78 | Expired |
| US5494858A | Method for forming porous composites as a low dielectric constant layer with varying porosity distribution electronics applications | Electricity | 74 | Expired |
| US5579151A | Spatial light modulator | Physics | 71 | Expired |
| US5472913A | Method of fabricating porous dielectric material with a passivation layer for electronics applications | Electricity | 65 | Expired |
| US5789819A | Low dielectric constant material for electronics applications | Electricity | 61 | Expired |
| US5750415A | Low dielectric constant layers via immiscible sol-gel processing | Electricity | 53 | Expired |
| US5525857A | Low density, high porosity material as gate dielectric for field emission device | Electricity | 52 | Expired |
| US5747880A | Interconnect structure with an integrated low density dielectric | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5804508A | Method of making a low dielectric constant material for electronics | Electricity | 41 | Expired |
| US5689151A | Anode plate for flat panel display having integrated getter | Electricity | 37 | Expired |
| US6599789B1 | Method of forming a field effect transistor | Electricity | 34 | Expired |
| US6245605A | Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing | Electricity | 32 | Expired |
| US6716687B2 | FET having epitaxial silicon growth | Electricity | 30 | Expired |
| US5569058A | Low density, high porosity material as gate dielectric for field emission device | Electricity | 26 | Expired |
| US6420250B1 | Methods of forming portions of transistor structures, methods of forming array peripheral circuitry, and structures comprising transistor gates | Electricity | 25 | Expired |
| US5656848A | High thermal resistance backfill material for hybrid UFPA's | Electricity | 24 | Expired |
| US6448129B1 | Applying epitaxial silicon in disposable spacer flow | Electricity | 23 | Expired |
| US5929441A | Low mass optical coating for thin film detectors | Physics | 21 | Expired |
| US6501114B2 | Structures comprising transistor gates | Electricity | 20 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.