Disposable-spacer damascene-gate process for SUB 0.05 .mu.m MOS devices

US6245619A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Diane C. Boyd · Lagrangeville, US
• Hussein I. Hanafi · Berkeley Heights, US
• Wesley C. Natzle · New Paltz, US

Key dates

• Filing date: Jan 21, 2000
• Grant date: Jun 12, 2001
• Expiry date: Jan 21, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0217

Abstract

Techniques to fabricate sub-0.05 .mu.m MOSFET devices with Super-Halo doping profile which provide excellent short-channel characteristics are provided. The techniques utilize a damascene-gate process to obtain MOSFET structures with oxide thickness above the source/drain region independent of the gate-oxide thickness and a disposable-spacer technique for the formation of the Super-Halo doping profile.