Wesley C. Natzle
66Patents
22h-index
100Co-inventors
91Inventor score
Filing activity: Nov 16, 1990 → Aug 10, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6335261B1 | Directional CVD process with optimized etchback | Electricity | 163 | Expired |
| US6271094A | Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance | Electricity | 140 | Expired |
| US6319794A | Structure and method for producing low leakage isolation devices | Electricity | 135 | Expired |
| US5282925A | Device and method for accurate etching and removal of thin film | Electricity | 125 | Expired |
| US5838055A | Trench sidewall patterned by vapor phase etching | Electricity | 110 | Expired |
| US7859013B2 | Metal oxide field effect transistor with a sharp halo | Electricity | 99 | Active |
| US6660598B2 | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region | Electricity | 97 | Expired |
| US6790733B1 | Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacer | Emerging Cross-Sectional Technologies | 97 | Expired |
| US6835614B2 | Damascene double-gate MOSFET with vertical channel regions | Electricity | 78 | Expired |
| US6841831B2 | Fully-depleted SOI MOSFETs with low source and drain resistance and minimal overlap capacitance using a recessed channel damascene gate process | Electricity | 57 | Expired |
| US5766971A | Oxide strip that improves planarity | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5876879A | Oxide layer patterned by vapor phase etching | Electricity | 40 | Expired |
| US6074951A | Vapor phase etching of oxide masked by resist or masking material | Electricity | 39 | Expired |
| US5636320A | Sealed chamber with heating lamps provided within transparent tubes | Mechanical Engineering; Lighting; Heating | 39 | Expired |
| US5980770A | Removal of post-RIE polymer on Al/Cu metal line | Emerging Cross-Sectional Technologies | 38 | Expired |
| US6774000B2 | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures | Electricity | 38 | Expired |
| US6926843B2 | Etching of hard masks | Electricity | 35 | Expired |
| US6071815A | Method of patterning sidewalls of a trench in integrated circuit manufacturing | Electricity | 34 | Expired |
| US6858532B2 | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling | Electricity | 31 | Expired |
| US6245619A | Disposable-spacer damascene-gate process for SUB 0.05 .mu.m MOS devices | Electricity | 28 | Expired |
| US6353249B1 | MOSFET with high dielectric constant gate insulator and minimum overlap capacitance | Electricity | 27 | Expired |
| US5081439A | Thin film resistor and method for producing same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5792275A | Film removal by chemical transformation and aerosol clean | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6656824B1 | Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch | Electricity | 20 | Expired |
| US6884734B2 | Vapor phase etch trim structure with top etch blocking layer | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.