Method for fabrication of thin film
US6245647A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a method for forming a thin film uniform in resistivity distribution on a semiconductor substrate. The temperature of the inside wall (6) of the reaction vessel (2) of vapor phase growth equipment is controlled to below the thermal decomposition temperature of a dopant gas such as diborane, for example, to within a range of room temperature to 250.degree. C. The region of this temperature range is defined so as to range from the upstream-side end of the semiconductor substrate (1) to at least an upstream-side 1/3 point of the substrate diameter along the direction of flow of the dopant gas supplied from one end of the reaction vessel (2), desirably, over the entire region just above the semiconductor substrate (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.