Process for forming a semiconductor device and a process for operating an apparatus

US6245686A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Jeffrey D. Rose · Austin, US
• Michael J. Hartig · Austin, US
• David Gerald Farber · Plano, US
• Danny R. Babbitt · Austin, US
• Jason A. Rivers · Austin, US
• Ai Koh · Cedar Park, US
• Terry G. Sparks · Austin, US

Key dates

• Filing date: Jun 5, 2000
• Grant date: Jun 12, 2001
• Expiry date: Jun 5, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A process for forming a semiconductor device includes placing a substrate (104) into an apparatus (300), creating a plasma, and processing the substrate (104). The apparatus (300) includes an electromagnetic source (120), a bulk material (302), and a first barrier layer (304). The bulk material (302) is between the electromagnetic source (120) and an interior (126) of the apparatus (300). The first barrier layer (304) is between the bulk material (302) and the interior (126). A process for operating an apparatus (300) includes forming a polymer layer along an inorganic layer (302, 306or 702), wherein the polymer layer is formed within the apparatus (300); removing the polymer layer to expose the inorganic layer (302, 306, or 702); and etching at least a portion of the exposed inorganic layer (302, 306, or 702). Typically, the inorganic layer (203, 306, or 702) is semiconductive or resistive.