Floating back gate electrically erasable programmable read-only memory (EEPROM)

US6248626A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Arvind Kumar · Beaverton, US
• Sandip Tiwari · Ithaca, US

Key dates

• Filing date: Jul 17, 1998
• Grant date: Jun 19, 2001
• Expiry date: Jul 17, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A semiconductor memory and a method of producing the memory, includes a transistor including a first gate having an oxide, and a channel, and a back-plane including a second gate and an oxide thereover, the second gate formed opposite to the channel of the transistor, the second gate including a floating gate, wherein a thickness of the oxide of the back-plane is separately scalable from an oxide of the first gate of the transistor.