Inventor · Beaverton, OR, US

Arvind Kumar

236Patents
15h-index
299Co-inventors
89Inventor score

Filing activity: May 16, 1997 → Nov 30, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7024695B1 Method and apparatus for secure remote system management Electricity 58 Expired
US6337497B1 Common source transistor capacitor stack Electricity 54 Expired
US6665731B1 Method for remotely accessing component management information Electricity 50 Expired
US6854122B1 Java common information model interface for windows management instrumentation via COM/DCOM Electricity 43 Expired
US6248626A Floating back gate electrically erasable programmable read-only memory (EEPROM) Electricity 38 Expired
US7593988B2 Systems and methods for multiparty session invite Electricity 35 Expired
US7418608B2 Method and an apparatus for managing power consumption of a server Emerging Cross-Sectional Technologies 32 Expired
US7718496B2 Techniques for enabling multiple Vt devices using high-K metal gate stacks Electricity 24 Active
US6954934B2 Management of links to data embedded in blocks of data Physics 24 Expired
USD847810S1 Computer notebook General 22 Active
US9934138B1 Application testing on a blockchain Electricity 21 Active
US8030145B2 Back-gated fully depleted SOI transistor Electricity 20 Active
US9412667B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 17 Active
US11379016B2 Methods and apparatus to operate closed-lid portable computers Physics 15 Active
US7365398B2 Compact SRAMs and other multiple transistor structures Electricity 15 Expired
USD822658S1 Computer notebook General 14 Active
US6668335B1 System for recovering data in a multiprocessor system comprising a conduction path for each bit between processors where the paths are grouped into separate bundles and routed along different paths Physics 13 Expired
USD888711S1 Computer notebook General 13 Active
US9626321B2 High performance interconnect Emerging Cross-Sectional Technologies 12 Active
US6445032B1 Floating back gate electrically erasable programmable read-only memory(EEPROM) Electricity 11 Expired
US9570354B2 Asymmetric high-K dielectric for reducing gate induced drain leakage Electricity 11 Active
US8212322B2 Techniques for enabling multiple Vt devices using high-K metal gate stacks Electricity 11 Active
US9269786B2 Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors Electricity 11 Active
US11101318B2 Back-side memory element with local memory select transistor Electricity 10 Active
US9577061B2 Asymmetric high-K dielectric for reducing gate induced drain leakage Electricity 10 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.