SIMOX using controlled water vapor for oxygen implants
US6248642A · kind A · utility
47Cited by
33References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Jun 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1.times.10.sup.6 /cm.sup.2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.