Method of forming a contact
US6248664A · kind A · utility
5Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1997 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | May 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01322
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric layer (27) is formed between a semiconductor surface (24) and an electrical contact (26) to promote adhesion of the contact (26). The dielectric layer (27) is formed by cleaning operation followed by a chemical oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.