Partially depleted SOI device having a dedicated single body bias means
US6249027A · kind A · utility
86Cited by
25References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 1998 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Jun 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6706
Abstract
A conductive body contact or layer is embedded in the bulk region of a partially depleted SOI device. The contact or layer is connected to the output of a bias voltage generator which generates a substrate bias voltage. The substrate bias voltage is routed to the bulk by way of the contact or layer to bias the threshold voltage of the partially depleted SOI device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.