Nitride semiconductor laser device
US6249534A · kind A · utility
55Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Apr 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al.sub.1-x-y-z Ga.sub.x In.sub.y B.sub.a N (where 0.ltoreq.x, y, z.ltoreq.1 and 0.ltoreq.x+y+z.ltoreq.1), which is transparent to light emitted from the laser diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.