Semiconductor physical quantity sensor
US6250165A · kind A · utility
33Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.