High pressure reoxidation/anneal of high dielectric constant materials
US6251720A · kind A · utility
Inventors
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high dielectric constant (HDC) capacitive dielectric film is fabricated in a capacitor structure using relatively high pressure surface treatments. After forming the HDC capacitive dielectric film on a supporting bottom plate electrode structure, a surface treatment comprising oxidation, at a pressure of at least approximately one atmosphere and temperatures of approximately at least 200 degrees Celsius densifies/conditions the HDC capacitive dielectric film. When using a polysilicon, crystalline silicon, hemispherical grain polysilicon, germanium, or silicon-germanium bottom plate electrode, a relatively high pressure surface treatment, comprising rapid thermal nitridation or oxidation, is used after forming the bottom plate electrode, forming a diffusion barrier layer in a controlled manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.