Inventor · Boise, ID, US

Scott DeBoer

123Patents
25h-index
28Co-inventors
86Inventor score

Filing activity: Nov 22, 1995 → Sep 10, 2008

Most-cited inventions

PatentTitleAreaCited byStatus
US6251802A Methods of forming carbon-containing layers Emerging Cross-Sectional Technologies 242 Expired
US6436818B1 Semiconductor structure having a doped conductive layer Electricity 104 Expired
US6204143A Method of forming high aspect ratio structures for semiconductor devices Electricity 75 Expired
US6218293A Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride Electricity 74 Expired
US5910880A Semiconductor circuit components and capacitors Electricity 67 Expired
US6015997A Semiconductor structure having a doped conductive layer Electricity 65 Expired
US6325017A Apparatus for forming a high dielectric film Electricity 53 Expired
US6090723A Conditioning of dielectric materials Electricity 49 Expired
US6365453B1 Method and structure for reducing contact aspect ratios Electricity 49 Expired
US6146959A Method of forming capacitors containing tantalum Electricity 45 Expired
US6162744A Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers Electricity 40 Expired
US5930106A DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films Electricity 38 Expired
US6461982B2 Methods for forming a dielectric film Electricity 36 Expired
US6180481A Barrier layer fabrication methods Electricity 35 Expired
US6365519B2 Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride Electricity 34 Expired
US6251720A High pressure reoxidation/anneal of high dielectric constant materials Electricity 33 Expired
US6191443A Capacitors, methods of forming capacitors, and DRAM memory cells Electricity 32 Expired
US6720609B2 Structure for reducing contact aspect ratios Electricity 32 Expired
US6858523B2 Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride Emerging Cross-Sectional Technologies 31 Expired
US6548405B2 Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride Electricity 31 Expired
US6872639B2 Fabrication of semiconductor devices with transition metal boride films as diffusion barriers Electricity 30 Expired
US6458645B2 Capacitor having tantalum oxynitride film and method for making same Electricity 29 Expired
US6150208A DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films Electricity 28 Expired
US5985771A Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers Electricity 28 Expired
US5960294A Method of fabricating a semiconductor device utilizing polysilicon grains Electricity 27 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.