Method for depositing high density plasma chemical vapor deposition oxide with improved topography
US6251795A · kind A · utility
5Cited by
7References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Apr 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.