Method and apparatus for manufacturing semiconductor device
US6251801A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1999 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method of manufacturing a semiconductor device, including the step of supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate, wherein the supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate, and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.