Method of analyzing morphology of bulk defect and surface defect on semiconductor wafer
US6252228A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1998 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Dec 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67288
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of analyzing the morphology of bulk and surface defects on a semiconductor wafer includes: determining a location of the defects; marking an indication proximate the location; milling the wafer using the indication, to thereby make a specimen; and analyzing the specimen to obtain the defects' morphology. Bulk defects as deep 5-250 .mu.m can be detected and surface defects as deep as 10 .mu.m from the wafer's surface can be detected. Both morphology analyses preferably include using TEM (Transmission Electron Microscopy). The location determination for both defects preferably includes projecting a laser beam onto the wafer. By obtaining the morphology of the defects, the cause of failure due to the bulk defects and surface defects can accurately be investigated, increasing semiconductor devices' reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.