Nonvolatile reprogrammable interconnect cell with FN tunneling device for programming and erase
US6252273A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1998 |
| Grant date | Jun 26, 2001 |
| Priority date | — |
| Expiry date | Aug 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable interconnect cell for selectively connecting circuit nodes of a field programmable integrated circuit array in a semiconductor substrate includes a switch field effect transistor, a sense field effect transistor, and an electron tunneling device with the transistors and electron tunneling device having interconnected floating gates and interconnected control gates. The floating gates comprise a first polysilicon layer which is restricted to each cell, and the control gates comprise a second polysilicon layer which extends to adjacent cells in the row. The source/drain regions of the sense transistor extend to source/drain regions of sense amplifiers in adjacent rows. Programming and erasing of the switch transistor is effected entirely by electron tunneling in the electron tunneling device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.