Microwave chemical vapor deposition apparatus
US6253703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1995 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Mar 31, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma CVD apparatus comprising a hermetically sealed vacuum vessel, an evacuating means for evacuating the vacuum vessel, and microwave introducing means for introducing a microwave through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits. The microwave plasma CVD apparatus solves all the problems in the conventional microwave plasma CVD apparatus, operates at a high rate of operation, improves working efficiency, reduces the manufacturing cost of a-Si devices, and reduces variance in performance between devices employing films deposited by the microwave plasma CVD apparatus. Since the microwave plasma CVD apparatus does not employ any large electromagnet, a film can be formed on a surface having a large area simply by selectively deciding a microwave propagation mode. Since the distance between the cavity resonator and the coupling hole can be varied, the microwave impedance can always be matched regardless of the sectional area of ionization, so that microwave power is used effectively and the gases are use…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.