Production of epitactic GaN layers on substrates

US6254675A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Fritz Aldinger · Rodenbach, DE
• Fred F. Lange · Lompoc, US
• Manfred Puchinger · Stuttgart, DE
• Thomas Wagner · Steinbach-Hallenberg, DE
• Joachim Bill · Ditzingen, DE
• Dieter Rodewald · Bad Essen, DE

Key dates

• Filing date: Jun 27, 2000
• Grant date: Jul 3, 2001
• Expiry date: Jun 27, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02628
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a process for the application of an epitactic GaN layer to a substrate by pyrolysis of precursor compounds.