Thin film transistor and a method of manufacturing thereof
US6255146A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2000 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
Abstract
According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode. Then, a heat treatment is applied to convert the amorphous silicon into polysilicon with the remaining polysilicon as a seed crystal. As a result, polysilicon having crystal grains of great grain size can be formed in uniform. Thus, the electric characteristics of a TFT can be improved with no difference in the electric characteristics between each TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.