Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
US6255195A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for forming a bonded semiconductor-on-insulator substrate for the fabrication of semiconductor devices and integrated circuits, a surface of a wafer of a monocrystalline semiconductor material is implanted with ions of the semiconductor material a to a selected depth in the wafer to form, adjacent to the surface, an amorphous layer of the semiconductor material. The layer of amorphous semiconductor material extends to a substantially planar zone disposed at substantially the selected depth and comprising the monocrystalline semiconductor material damaged by lattice defects, i.e., end-of-range implant damage. Undamaged material below the selected depth comprises a first layer of the monocrystalline semiconductor material. The wafer is heated under conditions effective to convert the amorphous layer to a second layer of the monocrystalline semiconductor material and to coalesce the zone of damaged monocrystalline semiconductor material, thereby forming a substantially planar intrinsic gettering zone of substantially pure semiconductor material that includes active gettering sites disposed at substantially the selected depth. An insulating bond layer on one surface of a ha…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.