Method and device for activating semiconductor impurities
US6255201A · kind A · utility
13Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 .mu.m to 11 .mu.m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 .mu.m to 10 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.