Method for forming a semiconductor device
US6255204A · kind A · utility
16Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | May 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first metal-containing material (22) is formed over a semiconductor device substrate (10). A second metal-containing material (32) is formed over the first metal containing material (22). The combination of the second metal-containing material (32) formed over the first metal-containing material (22) forms a metal stack (34). The metal stack (34) is annealed and a post-anneal stress of the metal stack (34) is less than an individual post-anneal stress of either one of the first conductive film (22) or the second conductive film (32).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.