Silicon carbide stop layer in chemical mechanical polishing over metallization layers
US6255211A · kind A · utility
17Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Oct 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon carbide (SiC) is used as the stop layer for the chemical-mechanical polishing used to planarize the surface of interlevel dielectrics, making the resistance of the vias more uniform. Alternatively, silicon carbonitride or silicon carboxide can be used in place of silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.