Leland Swanson
52Patents
14h-index
22Co-inventors
84Inventor score
Filing activity: Jan 29, 1993 → Mar 11, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6376285B1 | Annealed porous silicon with epitaxial layer for SOI | Electricity | 67 | Expired |
| US6262445A | SiC sidewall process | Emerging Cross-Sectional Technologies | 40 | Expired |
| US5334539A | Fabrication of poly(p-phenyleneacetylene) light-emitting diodes | Electricity | 37 | Expired |
| US6528426B1 | Integrated circuit interconnect and method | Electricity | 35 | Expired |
| US8386814B2 | Continuous monitoring of a USB client for battery charging specification charging capacity | Electricity | 34 | Active |
| US6555476B1 | Silicon carbide as a stop layer in chemical mechanical polishing for isolation dielectric | Electricity | 30 | Expired |
| US6261892A | Intra-chip AC isolation of RF passive components | Electricity | 28 | Expired |
| US6103590A | SiC patterning of porous silicon | Electricity | 24 | Expired |
| US6537607B1 | Selective deposition of emissive layer in electroluminescent displays | Electricity | 22 | Expired |
| US6949454B2 | Guard ring structure for a Schottky diode | Electricity | 17 | Expired |
| US6362065B1 | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer | Electricity | 17 | Expired |
| US6255211A | Silicon carbide stop layer in chemical mechanical polishing over metallization layers | Electricity | 17 | Expired |
| US6890836B2 | Scribe street width reduction by deep trench and shallow saw cut | Electricity | 16 | Expired |
| US6455393B1 | Air bridge/dielectric fill inductors | Electricity | 15 | Expired |
| US6503838B1 | Integrated circuit isolation of functionally distinct RF circuits | Electricity | 14 | Expired |
| US6376859B1 | Variable porosity porous silicon isolation | Electricity | 13 | Expired |
| US6552375B2 | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer | Electricity | 11 | Expired |
| US7368991B2 | System and method for clamping a differential amplifier | Electricity | 10 | Active |
| US6724066B2 | High breakdown voltage transistor and method | Electricity | 10 | Expired |
| US5352906A | Poly (p-phenyleneneacetylene) light-emitting diodes | Electricity | 8 | Expired |
| US6197654A | Lightly positively doped silicon wafer anodization process | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6656811B2 | Carbide emitter mask etch stop | Electricity | 7 | Expired |
| US6765450B2 | Common mode rejection in differential pairs using slotted ground planes | Electricity | 7 | Expired |
| US6787397B2 | Semiconductor device protective overcoat with enhanced adhesion to polymeric materials and method of fabrication | Electricity | 6 | Expired |
| US9201438B2 | Buck DC-DC converter with accuracy enhancement | Emerging Cross-Sectional Technologies | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.