Method for forming semiconductor dielectric layer
US6255229A · kind A · utility
5Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 1998 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | May 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor dielectric layer comprising the steps of providing a substrate having a plurality of semiconductor devices already formed thereon, and then forming a first dielectric layer over the substrate. Next, a silicon oxy-nitride layer is formed over the first dielectric layer, and finally a second dielectric layer is formed over the silicon oxy-nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.