CMOS semiconductor device
US6255700A · kind A · utility
7Cited by
22References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1997 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Jan 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/857
Abstract
A semiconductor device comprises a depletion-type NMOS transistor having a source region, a drain region connected to a power supply line, and a gate electrode connected to a ground line. An enhancement-type NMOS transistor has a source connected to the ground line, a drain connected in series with the source of the depletion-type MOS transistor between the power supply line and the ground line to define an output terminal, and a gate electrode connected directly to the output terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.