Semi-sacrificial diamond for air dielectric formation
US6255712A · kind A · utility
40Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Aug 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a structure and process for incorporating air or other gas as a permanent dielectric medium in a multilevel chip by providing CVD diamond as a semi-sacrificial interlevel and intralevel dielectric material. The semi-sacrificial dielectric is subsequently at least partially removed in an isotopic oxygen etch. A variation of the disclosure includes providing a final, permanent CVD diamond encapsulant to contain the gaseous dielectric medium within the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.