Defect inspection apparatus for silicon wafer
US6256092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1998 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Nov 23, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.