Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US6256222A · kind A · utility
13Cited by
27References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2000 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Jul 10, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5616
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.