Differential sense amplifiers for resistive cross point memory cell arrays
US6256247A · kind A · utility
88Cited by
4References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Resistance of a memory cell element in a resistive cross point memory cell array is sensed by a read circuit including a differential amplifier, a first direct injection preamplifier and a second direct injection preamplifier. During a read operation, the first direct injection preamplifier is coupled to a first input node of the differential amplifier, and the second direct injection preamplifier is coupled to a second input node of the differential amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.