Inventor · Palo Alto, CA, US

Frederick Perner

168Patents
38h-index
67Co-inventors
93Inventor score

Filing activity: Oct 5, 1990 → May 30, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US6873543B2 Memory device Physics 137 Expired
US6188615A MRAM device including digital sense amplifiers Physics 123 Expired
US5805477A Arithmetic cell for field programmable devices Physics 121 Expired
US6259644A Equipotential sense methods for resistive cross point memory cell arrays Electricity 113 Expired
US6185143A Magnetic random access memory (MRAM) device including differential sense amplifiers Physics 111 Expired
US7079436B2 Resistive cross point memory Physics 107 Expired
US6891768B2 Power-saving reading of magnetic memory devices Physics 97 Expired
US6363000B1 Write circuit for large MRAM arrays Physics 93 Expired
US7002197B2 Cross point resistive memory array Electricity 92 Expired
US6914809B2 Memory cell strings Physics 92 Expired
US6990012B2 Magnetic memory device Physics 91 Expired
US6324093A Write-once thin-film memory Physics 90 Expired
US6256247A Differential sense amplifiers for resistive cross point memory cell arrays Physics 88 Expired
US6246386A Integrated micro-display system Physics 78 Expired
US6674679B1 Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having equi-potential isolation Physics 77 Expired
US6584029B2 One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells Electricity 75 Expired
US6317375A Method and apparatus for reading memory cells of a resistive cross point array Physics 74 Expired
US6128239A MRAM device including analog sense amplifiers Physics 71 Expired
US6534841B1 Continuous antifuse material in memory structure Electricity 71 Expired
US6552745B1 CMOS active pixel with memory for imaging sensors Electricity 70 Expired
US6590804B1 Adjustable current mode differential amplifier Physics 68 Expired
US7224598B2 Programming of programmable resistive memory devices Physics 65 Expired
US6873544B2 Triple sample sensing for magnetic random access memory (MRAM) with series diodes Physics 62 Expired
US6456524B1 Hybrid resistive cross point memory cell arrays and methods of making the same Physics 62 Expired
US6256224A Write circuit for large MRAM arrays Physics 58 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.